In 2014 Matteo Buffolo received his Master Degree in Electronic Engineering from the University of Padova. In March 2018 he achieved its PhD at the Department of Information Engineering of the same institution, where he is actually working as an assistant professor. His research interests focus on the characterization and modeling of the physical mechanisms that limit performance and reliability of electronic and optoelectronic semiconductor devices. These include LEDs (Light Emitting Diodes), LDs (Laser Diodes), solar cells, MOS (Metal Oxide Semiconductor) capacitors, diodes and high electron mobility transistors (HEMTs). The main families of investigated semiconductor materials include nitrides (GaN and its alloys) and arsenides (GaAs and its alloys), as well as gallium oxide, copper indium gallium selenides (CIGS), antimony selenide (ASe), GaAsBi and diamond. Within these activities, he has published more than 200 journal articles and conference proceedings papers.